Planarized growth of III-V compound
文献类型：专利
| 作者 | TAKEUCHI, TATSUYA |
| 发表日期 | 2000-02-29 |
| 专利号 | US6030452 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Planarized growth of III-V compound |
| 英文摘要 | A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate having a step on a surface thereof and growing a group III-V compound semiconductor layer on a surface of the semiconductor substrate by metal organic vapor phase epitaxy using a source gas added with halogenated hydrocarbon containing one or two halogen atoms per one molecule. The surface of a substrate with a step thereon can be planarized by depositing an embedding layer on a lower level area. |
| 公开日期 | 2000-02-29 |
| 申请日期 | 1995-05-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45856]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | TAKEUCHI, TATSUYA. Planarized growth of III-V compound. US6030452. 2000-02-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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