Semiconductor laser diode deposited on a structured substrate surface
文献类型：专利
| 作者 | GFELLER, FRITZ; JAECKEL, HEINZ; MEIER, HEINZ |
| 发表日期 | 1994-01-18 |
| 专利号 | US5280535 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser diode deposited on a structured substrate surface |
| 英文摘要 | A semiconductor laser diode comprises a waveguide formed by an active layer sandwiched in between upper and lower cladding layers, wherein the cladding layers comprise a material having a bandgap that differs from that of the active layer. The waveguide is deposited on a structured substrate having a surface pattern that causes the waveguide to be bent near its ends, i.e., near cleaved or etched facets of the completed laser device thereby providing a non-absorbing mirror (NAM) window structure. A laser beam, generated in the center, planar waveguide section, leaves the waveguide at the bend, continuing substantially unabsorbed and undeflected through the wider bandgap cladding layer material towards the mirror facet. An amphoteric dopant, used during growth of the layered waveguide structure, causes a reversal of the conductivity-type within the semiconductor material deposited above inclined surface regions. Thus, a junction serving as current block is formed preventing lateral currents from reaching the facet region. |
| 公开日期 | 1994-01-18 |
| 申请日期 | 1992-12-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45860]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | GFELLER, FRITZ,JAECKEL, HEINZ,MEIER, HEINZ. Semiconductor laser diode deposited on a structured substrate surface. US5280535. 1994-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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