埋め込み型半導体レ-ザ
文献类型：专利
| 作者 | 小林 健一 |
| 发表日期 | 1994-04-27 |
| 专利号 | JP1994032338B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 埋め込み型半導体レ-ザ |
| 英文摘要 | PURPOSE:To maintain a single lateral mode even if high output power is implemented, by providing double light guides, in which another light guide mechanism is provided in one light guide, thereby broadening the width of an active layer, which is determined by the width of a mesa part, and enlarging the cross sectional area of the light guides. CONSTITUTION:A mesa part 100 is provided on a semiconductor substrate In the structure of the mesa part 100, a first semiconductor layer 30 of P type Al0.3Ga0.7As, whose forbidden band width is larger than an active layer 4, is held by a second semiconductor layer 20 of N type GaAs, whose forbidden band width is smaller or equal to the active layer 4. The active layer 4 is positioned so that the upper part and the lower part of the mesa 100 are separat ed. Therefore, the active layer 4 at the side of the upper part of the mesa is surrounded by a clad layer 5 of N type Al0.3Ga0.7As, whose refractive index is smaller than that of the active layer. Thus one light guide is formed. Light is guided in the light guide having a width W Even if the width W1 is made broad, a single lateral mode is maintained owing to the presence of an inner light guide having a width W2. |
| 公开日期 | 1994-04-27 |
| 申请日期 | 1984-11-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45868]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | 小林 健一. 埋め込み型半導体レ-ザ. JP1994032338B2. 1994-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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