Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer
文献类型：专利
| 作者 | ENYA, YOHEI; YOSHIZUMI, YUSUKE; OSADA, HIDEKI; ISHIBASHI, KEIJI; AKITA, KATSUSHI; UENO, MASAKI |
| 发表日期 | 2012-07-24 |
| 专利号 | US8228963 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer |
| 英文摘要 | A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface 13a tilts from a surface orthogonal to a reference axis that extends in a direction from one crystal axis of the m-axis and the a-axis of GaN toward the other crystal axis. The tilt angle AOFF is 0.05 degree or more to less than 15 degrees. The angle AOFF is equal to the angle defined by a vector VM and a vector VN. The inclination of the primary surface is shown by a typical m-plane SM and m-axis vector VM. The GaN-based semiconductor region 15 is provided on the primary surface 13a. In the well layers19 in an active layer 17, both the m-plane and the a-plane of the well layers 19 tilt from a normal axis AN of the primary surface 13a. The indium content of the well layers 19 is 0.1 or more. |
| 公开日期 | 2012-07-24 |
| 申请日期 | 2010-03-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45877]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | ENYA, YOHEI,YOSHIZUMI, YUSUKE,OSADA, HIDEKI,et al. Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer. US8228963. 2012-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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