Broad area diode laser with high efficiency and small far-field divergence
文献类型：专利
| 作者 | CRUMP, PAUL; ERBERT, GOETZ; WENZEL, HANS; FRICKE, JOERG |
| 发表日期 | 2013-09-17 |
| 专利号 | US8537869 |
| 著作权人 | FORSCHUNGSVERBUND BERLIN E.V. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Broad area diode laser with high efficiency and small far-field divergence |
| 英文摘要 | A broad area laser, with high efficiency and small far-field divergence, has an active layer, a first contact and a second contact, each having a width larger than 10 μm. An anti-wave guiding layer, which is positioned laterally with respect to the active region, is enclosed between the first and second contacts, wherein a refractive index of the anti-wave guiding layer is larger than a minimum refractive index of cladding layers. A minimum distance between the anti-wave guiding layer and a projection of one of the contacts on the plane of the anti-wave guiding layer is between 0 and 100 μm. |
| 公开日期 | 2013-09-17 |
| 申请日期 | 2012-05-04 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45887]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FORSCHUNGSVERBUND BERLIN E.V. |
| 推荐引用方式 GB/T 7714 | CRUMP, PAUL,ERBERT, GOETZ,WENZEL, HANS,et al. Broad area diode laser with high efficiency and small far-field divergence. US8537869. 2013-09-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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