Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device
文献类型：专利
| 作者 | FUJII, HIROAKI; ENDO, KENJI |
| 发表日期 | 2001-03-13 |
| 专利号 | US6200382 |
| 著作权人 | RENESAS ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device |
| 英文摘要 | In a method of manufacturing a semiconductor laser device having a double hetero structure which is structured by at least a first clad layer, an active layer and a second clad layer on a semiconductor substrate by the use of the organic metal vapor growth method, crystal is grown in first atmosphere gas containing hydrogen in a temperature rising process. Subsequently, the first atmosphere gas is switched into second atmosphere gas in a temperature dropping process after the crystal growth. The second atmosphere gas contains no hydrogen. |
| 公开日期 | 2001-03-13 |
| 申请日期 | 1999-07-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45891]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RENESAS ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | FUJII, HIROAKI,ENDO, KENJI. Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device. US6200382. 2001-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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