Semiconductor injection laser device
文献类型：专利
| 作者 | SUSAKI, WATARU; NAMIZAKI, HIROFUMI |
| 发表日期 | 1979-08-28 |
| 专利号 | US4166278 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor injection laser device |
| 英文摘要 | N type CaAlAs, GaAs and GaAlAs layers are successively grown on a semi-insulating GaAs substrate doped with Cr to form a semiconductor chip. Predetermined portions of those layers are selectively etched away to a depth reaching the substrate. Then a P type GaAlAs layer is epitaxially grown on the etched portions to restore the original shape of the chip. The chip is heated to form a pn junction in at least the GaAs layer serving as a light emitting region. |
| 公开日期 | 1979-08-28 |
| 申请日期 | 1978-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45892]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SUSAKI, WATARU,NAMIZAKI, HIROFUMI. Semiconductor injection laser device. US4166278. 1979-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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