Gallium nitride group semiconductor laser device and optical pickup apparatus
文献类型：专利
| 作者 | OKUMURA, TOSHIYUKI |
| 发表日期 | 2002-04-09 |
| 专利号 | US6370176 |
| 著作权人 | SURFWAX, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gallium nitride group semiconductor laser device and optical pickup apparatus |
| 英文摘要 | The gallium nitride group semiconductor laser device of this invention includes an active layer made of a nitride semiconductor formed between cladding layers and/or guide layers made of a nitride semiconductor on a substrate, wherein a light absorption layer is formed between the substrate and one of the cladding layers located closer to the substrate, the light absorption layer being made of a semiconductor having an energy gap substantially equal to or smaller than an energy gap of the active layer. |
| 公开日期 | 2002-04-09 |
| 申请日期 | 1999-08-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45895]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SURFWAX, INC. |
| 推荐引用方式 GB/T 7714 | OKUMURA, TOSHIYUKI. Gallium nitride group semiconductor laser device and optical pickup apparatus. US6370176. 2002-04-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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