Low-dimensional plasmon light emitting device
文献类型：专利
| 作者 | NAGAO, TADAAKI |
| 发表日期 | 2005-09-20 |
| 专利号 | US6946674 |
| 著作权人 | JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Low-dimensional plasmon light emitting device |
| 英文摘要 | A low-dimensional plasmon-light emitter for converting an inputted electric energy luminescence with an arbitrary energy over a broad range. The emitter has a low-dimensional conductive structure incorporated inside or in a surface layer of a semiconductor or dielectric. A periodic nanostructure is incorporated in the vicinity of or inside the low-dimensional conductive structure. The low-dimensional conductive structure may be a quantum well formed inside a semiconductor or dielectric, a space-charge layer formed on a surface or heterojunction of a semiconductor or dielectric, or a surface or interface electronic band with high carrier density formed on a surface or heterojunction of a semiconductor or dielectric. The periodic nanostructure is selected from a periodic structure formed by vapor-deposition or etching of fine metallic wires, a periodic structure of a film formed on surfaces with atomic steps, or a periodic structure self-organized during epitaxial growth or polymerization of an organic molecule or polymer. |
| 公开日期 | 2005-09-20 |
| 申请日期 | 2002-03-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45900]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
| 推荐引用方式 GB/T 7714 | NAGAO, TADAAKI. Low-dimensional plasmon light emitting device. US6946674. 2005-09-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。