Epitaxial layer capable of exceeding critical thickness
文献类型：专利
| 作者 | MUKAI, KOKI; SUGAWARA, MITSURU |
| 发表日期 | 2003-10-28 |
| 专利号 | US6639254 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Epitaxial layer capable of exceeding critical thickness |
| 英文摘要 | A substrate has a principal surface exposing a first semiconductor material. A micro structure is disposed on the principal surface of the substrate. The micro structure is made of a second semiconductor material having a lattice constant different from a lattice constant of the first semiconductor material, and defines a three-dimensionally irregular upper surface. A strained layer is disposed on the micro structure. The strained layer is made of a third semiconductor material having a lattice constant different from a lattice constant of the first semiconductor material. A semiconductor device is provided which has the structure allowing to form a high quality strained layer in terms of crystallography. |
| 公开日期 | 2003-10-28 |
| 申请日期 | 2001-01-09 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45905]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | MUKAI, KOKI,SUGAWARA, MITSURU. Epitaxial layer capable of exceeding critical thickness. US6639254. 2003-10-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。