Buried hetero-structure InP-based opto-electronic device with native oxidized current blocking layer
文献类型：专利
| 作者 | JIE, WANG ZHI; JIN, CHUA SOO |
| 发表日期 | 2001-09-11 |
| 专利号 | US6287884 |
| 著作权人 | INSTITUTE OF MATERIALS RESEACH AND ENGINEERING |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Buried hetero-structure InP-based opto-electronic device with native oxidized current blocking layer |
| 英文摘要 | A buried hetero-structure with native oxidized current blocking layer for InP-based opto-electronic devices comprises a InP semiconductor substrate, a buffer layer, a ridge mesa containing lower confinement layer, active layer and upper grating confinement layer, a first InP cladding layer and a native oxidized Al-bearing layer as current blocking layers at both lateral edges, a second InP cladding layer, contact layer, contact metal, and the second ridge mesa covered with insulating layer. This method is to facilitate the processing of conventional buried hetero-structure InP-based opto-electronic device and improve the performance under high temperature and high current operation. |
| 公开日期 | 2001-09-11 |
| 申请日期 | 1999-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45915]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INSTITUTE OF MATERIALS RESEACH AND ENGINEERING |
| 推荐引用方式 GB/T 7714 | JIE, WANG ZHI,JIN, CHUA SOO. Buried hetero-structure InP-based opto-electronic device with native oxidized current blocking layer. US6287884. 2001-09-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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