Method of producing multi-wavelength semiconductor laser device
文献类型：专利
| 作者 | LEE, SANG DON |
| 发表日期 | 2009-10-20 |
| 专利号 | US7606280 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of producing multi-wavelength semiconductor laser device |
| 英文摘要 | A method for producing a multi-wavelength semiconductor laser device includes steps of: forming first and second nitride epitaxial layers in parallel on a substrate for growth of a nitride single crystal; separating the first and second nitride epitaxial layers from the substrate; attaching the separated first and second nitride epitaxial layers to a first conductivity-type substrate; selectively removing the first and second nitride semiconductor epitaxial layers to expose a portion of the first conductivity-type substrate and to form first and second semiconductor laser structures, respectively; and forming a third semiconductor laser structure on the exposed portion of the first conductivity-type substrate. |
| 公开日期 | 2009-10-20 |
| 申请日期 | 2007-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45919]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | LEE, SANG DON. Method of producing multi-wavelength semiconductor laser device. US7606280. 2009-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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