Single longitudinal mode GaAs/GaAlAs double heterostructure laser
文献类型：专利
| 作者 | STREIFER, WILLIAM; SCIFRES, DONALD R.; BURNHAM, ROBERT D. |
| 发表日期 | 1979-01-02 |
| 专利号 | US4132960 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Single longitudinal mode GaAs/GaAlAs double heterostructure laser |
| 英文摘要 | A heterojunction laser in which single longitudinal mode operation is achieved by heavily doping the active region of the laser. The dopent density should be approximately 10.sup.19 /cm.sup.3 when the dopent is zinc. A doping density as heavy as possible should be used when the dopent is germanium or any other acceptor impurity. The heavy doping density of the active region excludes the injection of holes into the active region and that exclusion results in single longitudinal mode operation. |
| 公开日期 | 1979-01-02 |
| 申请日期 | 1977-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45925]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | STREIFER, WILLIAM,SCIFRES, DONALD R.,BURNHAM, ROBERT D.. Single longitudinal mode GaAs/GaAlAs double heterostructure laser. US4132960. 1979-01-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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