Surface emitting semiconductor laser, and its fabrication method
文献类型：专利
| 作者 | SATO, TAKAHIRO; SAKATA, HAJIME |
| 发表日期 | 2003-10-28 |
| 专利号 | US6639927 |
| 著作权人 | CANON KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Surface emitting semiconductor laser, and its fabrication method |
| 英文摘要 | A surface emitting semiconductor laser includes an active region formed on a growth substrate, upper and lower mirror layers that sandwich the active region to construct a vertical cavity, a selective oxidization layer, and a current injecting unit for injecting a current into the active region. The selective oxidization layer is selectively oxidized and insulated and is provided on the side of the active region opposite to the side of the substrate. In this structure, a post portion is formed by removing semiconductor material formed on the substrate down to an uppermost or halfway level of the selective oxidization layer while the selective oxidization layer is used as an etch stop layer, and the selective oxidization layer acts as both a current confinement layer for the current injection and an insulating layer for the current injecting unit. |
| 公开日期 | 2003-10-28 |
| 申请日期 | 2000-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45926]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SATO, TAKAHIRO,SAKATA, HAJIME. Surface emitting semiconductor laser, and its fabrication method. US6639927. 2003-10-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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