Semiconductor laser apparatus and optical amplifier apparatus
文献类型：专利
| 作者 | ARIMOTO, HIDEO |
| 发表日期 | 2010-01-26 |
| 专利号 | US7653106 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser apparatus and optical amplifier apparatus |
| 英文摘要 | A method of bonding a compound semiconductor on a silicon waveguide is used for attaining a laser above a silicon substrate. While it is essential to attain laser oscillation by injection of a current, since amorphous is formed at the bonding surface of a silicon compound semiconductor, it is difficult to directly inject the current through the silicon waveguide to the compound semiconductor. Further, even when an electrode is formed near the waveguide and the current is injected, since the current is not injected near the silicon waveguide, laser oscillation through the silicon waveguide can not be attained. The problem is solved by forming a structure of laterally injecting a current to the silicon waveguide and concentrating the current near the silicon waveguide in a compound semiconductor. Specific methods includes the following two methods, that is, a method of forming a tunneling junction structure in the compound semiconductor and another method of laterally forming a P-I-N junction to the compound semiconductor. |
| 公开日期 | 2010-01-26 |
| 申请日期 | 2007-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45933]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | ARIMOTO, HIDEO. Semiconductor laser apparatus and optical amplifier apparatus. US7653106. 2010-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。