Longitudinally coupled surface emitting semiconductor laser array
文献类型：专利
| 作者 | DEFREEZ, RICHARD K.; ELLIOTT, RICHARD A.; PURETZ, JOSEPH |
| 发表日期 | 1989-01-10 |
| 专利号 | US4797892 |
| 著作权人 | OREGON GRADUATE CENTER, BEAVERTON, WASHINGTON, A OREGON CORP. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Longitudinally coupled surface emitting semiconductor laser array |
| 英文摘要 | A longitudinally coupled, coherent, surface emitting semiconductor laser array in a monolithic wafer is disclosed. Active regions of diode laser-striped semiconductor material are focused ion beam (FIB) micromachined to form transversely disposed channels of symmetric, opposed, generally parabolic mirrored surfaces. Diode laser pairs, emitting laser energy in a generally horizontal plane, are longitudinally injection-coupled (phase-locked) by semi-transmissive, opposed regions that are micromachined into the otherwise reflective parabolic surfaces of the channel. Coherent, laser energy is reflected thereby generally normally away from the surface of the monolithic structure. |
| 公开日期 | 1989-01-10 |
| 申请日期 | 1987-05-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45944]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OREGON GRADUATE CENTER, BEAVERTON, WASHINGTON, A OREGON CORP. |
| 推荐引用方式 GB/T 7714 | DEFREEZ, RICHARD K.,ELLIOTT, RICHARD A.,PURETZ, JOSEPH. Longitudinally coupled surface emitting semiconductor laser array. US4797892. 1989-01-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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