Monolithically integrated laser diode chip having a construction as a multiple beam laser diode
文献类型：专利
| 作者 | MULLER, MARTIN; GRONNINGER, GUNTHER; BEHRES, ALEXANDER |
| 发表日期 | 2012-06-05 |
| 专利号 | US8194712 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Monolithically integrated laser diode chip having a construction as a multiple beam laser diode |
| 英文摘要 | A monolithically integrated laser diode chip having a construction as a multiple beam laser diode, which, on a semiconductor substrate (3) comprised of GaAs, has at least two laser stacks (4a, 4b, 4c) which are arranged one above another and which each contain an active zone (7). The active zone (7) is in each case arranged between waveguide layers (8). The waveguide layers (8) each adjoin a cladding layer (6) at a side remote from the active zone. At least one of the waveguide layers (8) or cladding layers (6) of at least one laser stack (4a, 4b, 4c), comprises AlxGa1-xAs, where 0≦x≦1, and at least one additional material from main group III or V, such that the lattice mismatch between the at least one waveguide layer (8) or cladding layer (6) comprising the at least one additional element and the semiconductor substrate (3) composed of GaAs is reduced. This increases the lifetime of the laser diode chip. |
| 公开日期 | 2012-06-05 |
| 申请日期 | 2008-06-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45945]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | MULLER, MARTIN,GRONNINGER, GUNTHER,BEHRES, ALEXANDER. Monolithically integrated laser diode chip having a construction as a multiple beam laser diode. US8194712. 2012-06-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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