Semiconductor photonic element, method of fabricating the same, and semiconductor photonic device equipped therewith
文献类型：专利
| 作者 | YOKOYAMA, YOSHITAKA; KUDO, KOJI; TSUJI, MASAYOSHI |
| 发表日期 | 2001-11-27 |
| 专利号 | US6323507 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor photonic element, method of fabricating the same, and semiconductor photonic device equipped therewith |
| 英文摘要 | A semiconductor photonic element is provided, which realize low threshold current and satisfactory characteristics in the high temperatures and/or high output operating condition. This element is comprised of (a) a semiconductor substrate; (b) a mesa structure formed on a first surface of the substrate to extend in a specific direction; the mesa structure including an active layer and a pair of p- and n-type cladding layers located respectively at top and bottom sides of the active layer, forming a double heterojunction; (c)a current-constricting structure for constricting an injection current formed at each side of the mesa structure to expose a top of the mesa structure from the current-constricting structure; the current-constricting structure comprising a first current-blocking part and a second current-blocking part; the first current-blocking part having a dielectric current-blocking layer that extends to the mesa structure; the dielectric current-blocking layer being contacted with top edges of the mesa structure; the second current-blocking part having a semiconductor current-blocking layer; and (d) a semiconductor burying layer formed to cover the mesa structure and the multilayer current-constricting structure; the semiconductor burying layer being contacted with the top of the mesa structure. |
| 公开日期 | 2001-11-27 |
| 申请日期 | 2000-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45947]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | YOKOYAMA, YOSHITAKA,KUDO, KOJI,TSUJI, MASAYOSHI. Semiconductor photonic element, method of fabricating the same, and semiconductor photonic device equipped therewith. US6323507. 2001-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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