GaAs/AlGaAs heterostructure laser containing indium
文献类型：专利
| 作者 | SCIFRES, DONALD R.; WELCH, DAVID F.; ENDRIZ, JOHN; STREIFER, WILLIAM |
| 发表日期 | 1991-01-08 |
| 专利号 | US4984242 |
| 著作权人 | JDS UNIPHASE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | GaAs/AlGaAs heterostructure laser containing indium |
| 英文摘要 | GaAs/AlGaAs heterostructure lasers containing indium in at least one layer other than or in addition to the active region. Embodiments are described in which indium added in low concentration to the cladding functions to match the lattice constants between the cladding and active layers, in which indium is added in high concentration to form strain layers that prevent defect migration therethrough and if proximate to the active region decrease transparency current and increase differential gain, in which indium is added uniformly to all layers to suppress defect formation, and in which indium is added to a cap layer to reduce metallization contact resistance. |
| 公开日期 | 1991-01-08 |
| 申请日期 | 1989-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45948]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JDS UNIPHASE CORPORATION |
| 推荐引用方式 GB/T 7714 | SCIFRES, DONALD R.,WELCH, DAVID F.,ENDRIZ, JOHN,et al. GaAs/AlGaAs heterostructure laser containing indium. US4984242. 1991-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。