Optical semiconductor device for changing a beam diameter
文献类型：专利
| 作者 | TABUCHI, HARUHIKO; NORIZUKI, MASUMI; GOTO, MASAMI |
| 发表日期 | 1998-07-28 |
| 专利号 | US5787106 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device for changing a beam diameter |
| 英文摘要 | An optical semiconductor device has a greatly reduced transmission constant even when a reduction rate in the thickness of a core layer is small so that a relatively high beam-diameter increasing efficiency is obtained. The optical semiconductor device has a multilayered structure with a first end surface perpendicular to an optical axis of the optical semiconductor device and a second end surface opposite to the first end surface. A core layer has a first refractive index. A lower cladding layer is provided on a lower side of the core layer, the lower cladding layer having a second refractive index. An upper cladding layer is provided on an upper side of the core layer, the upper cladding layer having the second refractive index. A transmission constant reduction enhancing layer is provided between the lower cladding layer and the upper cladding layer, the transmission constant reduction enhancing layer having a third refractive index less than the first refractive index and the second refractive index. The optical semiconductor device includes a first area and a second area, a portion of the core layer in the first area having a uniform thickness, a portion of the core layer in the second area having a thickness gradually decreasing toward the first end surface of the optical semiconductor device. |
| 公开日期 | 1998-07-28 |
| 申请日期 | 1996-03-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45951]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | TABUCHI, HARUHIKO,NORIZUKI, MASUMI,GOTO, MASAMI. Optical semiconductor device for changing a beam diameter. US5787106. 1998-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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