Net strain reduction in integrated laser-modulator
文献类型：专利
| 作者 | GLEW, RICHARD W.; GRENKO, JUDITH A. |
| 发表日期 | 2001-05-29 |
| 专利号 | US6239454 |
| 著作权人 | LUCENT TECHNOLOGIES INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Net strain reduction in integrated laser-modulator |
| 英文摘要 | A semiconductor device including first and second epitaxial layers grown in a selective area growth region on a substrate includes an active layer or well layer comprising a first composition formed using a trimethylgallium precursor material and a barrier layer comprising a second composition formed using a triethylgallium precursor material. The use of the first and second compositions in the well layer and barrier layer respectively maximizes the strain in the well layer while simultaneously minimizing the net strain of the selective area growth region. |
| 公开日期 | 2001-05-29 |
| 申请日期 | 1999-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45953]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES INC. |
| 推荐引用方式 GB/T 7714 | GLEW, RICHARD W.,GRENKO, JUDITH A.. Net strain reduction in integrated laser-modulator. US6239454. 2001-05-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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