Optical amplifier-integrated super luminescent diode and external cavity laser using the same
文献类型：专利
| 作者 | OH, SU HWAN; JU, JUNG JIN |
| 发表日期 | 2010-03-30 |
| 专利号 | US7688870 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical amplifier-integrated super luminescent diode and external cavity laser using the same |
| 英文摘要 | Provided is a super luminescent diode having low power consumption due to low threshold current and a high output power in low-current operation, which is suitable for an external cavity laser. The super luminescent diode for use in the external cavity laser is divided into a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region to provide a light source having a low threshold current and a nearly double output power of a conventional SLD. A super luminescent diode-integrated reflective optical amplifier includes a substrate that has a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region for amplifying light generated from the SLD region, an optical waveguide that has a buried heterostructure, the buried heterostructure including an active layer extending over the SLD and SOA regions on the substrate and tapered in the SOA region; a current blocking layer formed around the active layer for blocking a current flow to layers other than the active layer, the current blocking layer including a stack of semiconductor layers having different conductivity types; and a clad layer formed on the optical waveguide and the current blocking layer. |
| 公开日期 | 2010-03-30 |
| 申请日期 | 2008-07-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45955]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | OH, SU HWAN,JU, JUNG JIN. Optical amplifier-integrated super luminescent diode and external cavity laser using the same. US7688870. 2010-03-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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