Semiconductor device integrating a laser and a transistor
文献类型：专利
| 作者 | HAYASHI, HIDEKI; KIKUCHI, KENICHI |
| 发表日期 | 1985-06-04 |
| 专利号 | US4521888 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device integrating a laser and a transistor |
| 英文摘要 | A semiconductor device composed of a transistor for modulation and a semiconductor laser as one body, in which on the uppermost layer of a semiconductor laser composed of a multilayer epitaxial wafer, there is provided a layer consisting of a semiconductor of different conductivity type from that of the uppermost layer and having a V-shaped groove filled with a semiconductor zone of the same conductivity type as that of the uppermost layer, and ohmic electrodes are provided on the back surface of the substrate of the semiconductor laser, the semiconductor layer of different conductivity type and the semiconductor zone of the same conductivity type. |
| 公开日期 | 1985-06-04 |
| 申请日期 | 1984-08-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45957]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | HAYASHI, HIDEKI,KIKUCHI, KENICHI. Semiconductor device integrating a laser and a transistor. US4521888. 1985-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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