Group III nitride compound semiconductor laser
文献类型：专利
| 作者 | HATANO, TAKASHI; IWAYAMA, SHO; KOIKE, MASAYOSHI |
| 发表日期 | 2004-10-05 |
| 专利号 | US6801559 |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group III nitride compound semiconductor laser |
| 英文摘要 | A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al0.1Ga0.9N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.55N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al0.25Ga0.75N p-layer, Mg-doped Al0.1Ga0.9N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process. |
| 公开日期 | 2004-10-05 |
| 申请日期 | 2003-03-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45962]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | HATANO, TAKASHI,IWAYAMA, SHO,KOIKE, MASAYOSHI. Group III nitride compound semiconductor laser. US6801559. 2004-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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