高抵抗半導体層埋め込み型半導体レーザ
文献类型：专利
| 作者 | 中村 隆宏; 北村 光弘; 麻多 進 |
| 发表日期 | 1996-08-22 |
| 专利号 | JP2550714B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 高抵抗半導体層埋め込み型半導体レーザ |
| 英文摘要 | PURPOSE:To offer a high resistive semiconductor layer buried type semiconductor laser capable of executing a high speed modulation by a method wherein a current block layer includes, at least, a semi-insulating semiconductor layer possessed of a level deep enough to trap electrons and another semi-insulating semiconductor layer possessed of a level deep enough to trap holes. CONSTITUTION:A silicon doped N-type InP layer 18, an active layer 19, a zinc doped P-type InP layer 20, and a contact layer 17 are epitaxially grown in succession on a substrate 1 Then, SiO2 stripe-like masks 2mum in width are formed at an interval of 300mum. Thereafter, the contact layer 17, the P-type InP layer 20, the active layer 19, and the N-type InP layer 18 are etched. Moreover, leaving the SiO2 stripe-like masks as they are, an iron doped high resistive InP layer 12, a titanium doped high resistive InP layer 15 are selectively, epitaxially grown on the recessed part of a mesa stripe so as to make the whole face flat. After the SiO2 strip-like masks are removed, electrodes 10 are formed through a vacuum evaporation method. |
| 公开日期 | 1996-11-06 |
| 申请日期 | 1989-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45963]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 中村 隆宏,北村 光弘,麻多 進. 高抵抗半導体層埋め込み型半導体レーザ. JP2550714B2. 1996-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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