Manufacturing method of semiconductor film
文献类型：专利
| 作者 | OGAWA, MASAHIRO; UEDA, DAISUKE; ISHIDA, MASAHIRO |
| 发表日期 | 2003-07-08 |
| 专利号 | US6589857 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Manufacturing method of semiconductor film |
| 英文摘要 | A first semiconductor film made of a nitride semiconductor is grown through epitaxial growth on a light transmitting substrate. A thermal decomposition layer is disposed in a space between the substrate and the first semiconductor film by irradiating laser light to the first semiconductor film from the back surface of the substrate. After a second semiconductor film made of a nitride semiconductor is grown through epitaxial growth while the first semiconductor film is placed on the substrate, the temperature of the substrate is lowered to room temperature. Then, by separating and removing the substrate from the first and second semiconductor films, it is possible to obtain a nitride semiconductor substrate having an area substantially as large as the area of the substrate. |
| 公开日期 | 2003-07-08 |
| 申请日期 | 2002-03-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45972]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | OGAWA, MASAHIRO,UEDA, DAISUKE,ISHIDA, MASAHIRO. Manufacturing method of semiconductor film. US6589857. 2003-07-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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