Nitride-based semiconductor laser device and method of fabricating the same
文献类型：专利
| 作者 | NOMURA, YASUHIKO; KUNISATO, TATSUYA |
| 发表日期 | 2005-08-09 |
| 专利号 | US6928096 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride-based semiconductor laser device and method of fabricating the same |
| 英文摘要 | A nitride-based semiconductor laser device capable of preventing deterioration in the vicinity of a facet is obtained. This nitride-based semiconductor laser device comprises a first conductivity type first cladding layer consisting of a nitride-based semiconductor formed on a substrate, an active layer formed on the first cladding layer, a second conductivity type second cladding layer consisting of a nitride-based semiconductor formed on the active layer and a high-resistance region formed at least portions of the active layer and the second cladding layer in the vicinity of the facet. The high-resistance region has higher resistance than the remaining regions, whereby a current hardly flows to the high-resistance region. Thus, temperature increase is suppressed in the vicinity of the facet, whereby deterioration can be prevented in the vicinity of the facet. |
| 公开日期 | 2005-08-09 |
| 申请日期 | 2002-04-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45977]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | NOMURA, YASUHIKO,KUNISATO, TATSUYA. Nitride-based semiconductor laser device and method of fabricating the same. US6928096. 2005-08-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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