High power single spatial mode semiconductor laser
文献类型：专利
| 作者 | OLSHANSKY, ROBERT |
| 发表日期 | 1987-08-25 |
| 专利号 | US4689797 |
| 著作权人 | GTE LABORATORIES INCORPORATED A DE CORP |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High power single spatial mode semiconductor laser |
| 英文摘要 | A high power single spatial mode semiconductor laser provides strong lateral index guiding to maintain single transverse mode output and yet has a large cavity area. The large cavity area provides low series resistance, low thermal resistance, and lower operating current densities and photon densities than can be achieved by conventional cavity designs. The result is a laser which can operate at high output power at a single transverse mode. In the plane of the p-n junction, the active layer has a cross-section including a waveguide section of width between 1-2 microns which provides lateral mode stability and discrimination against high order transverse modes with a directly adjacent amplifier section consisting of a layer of about 5-20 microns width and several hundred microns in length. Due to the large cross section area of the amplifier section, the majority of the current flows through the amplifier section where most of the heat is generated. The device has only a few ohms series resistance and significantly lower thermal impedances than conventional narrow cavity design. |
| 公开日期 | 1987-08-25 |
| 申请日期 | 1985-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45991]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GTE LABORATORIES INCORPORATED A DE CORP |
| 推荐引用方式 GB/T 7714 | OLSHANSKY, ROBERT. High power single spatial mode semiconductor laser. US4689797. 1987-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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