Group III-V nitride laser devices with cladding layers to suppress defects such as cracking
文献类型：专利
| 作者 | SVERDLOV, BORIS N. |
| 发表日期 | 2002-09-24 |
| 专利号 | US6455337 |
| 著作权人 | JDS UNIPHASE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group III-V nitride laser devices with cladding layers to suppress defects such as cracking |
| 英文摘要 | A Group III-V nitride compound semiconductor light emitting device is constructed without the employing homogeneous layers of AlGaN. Instead of homogeneous AlGaN cladding layers, GaN cladding layers are utilized. Since high temperature growths that accompany the formation of AlGaN layers is no longer required, the stochiometric amount of indium in InxGa1-xN core layers utilized in the active region may be made greater to achieve better electrical and optical properties in the device. The loss of waveguiding achieved by the higher refractive index layers of AlGaN is compensated by the use of core layers of InGaN on adjacent sides of the active region comprising InyGa1-yN layer or layers. Other techniques are disclosed utilizing digital alloying of cladding layers comprising GaN/AlN superlattices or AlxGa1-xN/AlyGa1-yN superlattices, or growing Group III-V nitride devices on selected regions of the growth surface of the substrates so that large stresses are not produced as would be the case with uniform growth over the entire growth surface of the substrate. |
| 公开日期 | 2002-09-24 |
| 申请日期 | 2001-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46001]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JDS UNIPHASE CORPORATION |
| 推荐引用方式 GB/T 7714 | SVERDLOV, BORIS N.. Group III-V nitride laser devices with cladding layers to suppress defects such as cracking. US6455337. 2002-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。