Semiconductor optical device and a method of fabricating the same
文献类型：专利
| 作者 | IGA, RYUZO; KONDO, YASUHIRO |
| 发表日期 | 2010-04-20 |
| 专利号 | US7701993 |
| 著作权人 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optical device and a method of fabricating the same |
| 英文摘要 | In order to provide excellent device characteristics and enhance fabrication yield and run-to-run reproducibility in a buried device structure using a low mesa on a p-type substrate, a cross sectional configuration before growth of a contact layer of a device, i.e., after growth of an over-cladding layer is flattened so as not to cause a problem in crystal quality of the contact layer. A mesa-stripe stacked body including at least a p-type cladding layer (2), an active layer (4) and an n-type cladding layer (6) is formed on a p-type semiconductor substrate (1), a current-blocking layer (8) is buried in both sides of the stacked body, and an n-type over-cladding layer (9) and an n-type contact layer (10) are disposed on the current-blocking layer (8) and the stacked body. The n-type over-cladding layer (9) is made of a semiconductor crystal having a property for flattening a concavo-convex shape of upper surfaces of the current-blocking layer (8) and the stacked body. |
| 公开日期 | 2010-04-20 |
| 申请日期 | 2005-05-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46009]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 推荐引用方式 GB/T 7714 | IGA, RYUZO,KONDO, YASUHIRO. Semiconductor optical device and a method of fabricating the same. US7701993. 2010-04-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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