Semiconductor laser device in which thicknesses of optical guide region and AlGaN cladding layers satisfy predetermined condition
文献类型：专利
| 作者 | HAYAKAWA, TOSHIRO |
| 发表日期 | 2004-01-27 |
| 专利号 | US6683324 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device in which thicknesses of optical guide region and AlGaN cladding layers satisfy predetermined condition |
| 英文摘要 | In a semiconductor laser device, an optical guide region includes an active layer and first and second optical waveguide layers respectively formed above and under the active layer, and first and second cladding layers are respectively formed above and under the optical guide region. Each of the first and second cladding layers includes at least one AlGaN layer. The thickness tg (nm) of the optical guide region and the thicknesses tc1 and tc2 of the first and second cladding layers satisfy a condition thatwhere tc (nm) represents each of the thicknesses tc1 and tc2. |
| 公开日期 | 2004-01-27 |
| 申请日期 | 2001-09-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46012]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | HAYAKAWA, TOSHIRO. Semiconductor laser device in which thicknesses of optical guide region and AlGaN cladding layers satisfy predetermined condition. US6683324. 2004-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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