Wavelength-tunable semiconductor laser
文献类型：专利
| 作者 | SUZUKI, NOBUO; TOHYAMA, MASAKI; ONOMURA, MASAAKI |
| 发表日期 | 1994-09-13 |
| 专利号 | US5347526 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Wavelength-tunable semiconductor laser |
| 英文摘要 | A wavelength-tunable semiconductor laser which comprises a semiconductor substrate having first and second major surfaces, a distribution-feedback resonator having an active layer and a cladding layer, formed on the first major surface of the substrate and shaped like a stripe, and a first section and a second section aligned along the length of the resonator, and electrodes formed on the first and second sections of the resonator, respectively, for controlling current densities in the first and second section independently. The laser is characterized in that temperature changes more in the first section than in the second section, due to changes in densities of currents injected into the first and second sections. |
| 公开日期 | 1994-09-13 |
| 申请日期 | 1993-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46013]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | SUZUKI, NOBUO,TOHYAMA, MASAKI,ONOMURA, MASAAKI. Wavelength-tunable semiconductor laser. US5347526. 1994-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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