Laserdiode mit zu den Epitaxieschichten im wesentlichen senkrecht verlaufendem Ausgangsstrahl.
文献类型：专利
| 作者 | MAKIUCHI MASAO,JP |
| 发表日期 | 1995-08-03 |
| 专利号 | DE69201908T2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Laserdiode mit zu den Epitaxieschichten im wesentlichen senkrecht verlaufendem Ausgangsstrahl. |
| 英文摘要 | The laser diode comprises a substrate (41, 42), a disc-shaped active layer (43) provided epitaxially on the substrate for producing an optical beam as a result of the stimulated emission, a disckshaped contact layer (44) provided epitaxially on the active layer for injecting carriers -into the active layer, an optical confinement layer (45) provided on the substrate to surround the active layer and the contact layer laterally for confining the optical beam in the active layer, a convex mirror part (41a) provided on a lower major surface of the substrate for reflecting back the optical beam such that the optical beam is converged to the active layer, an opposing mirror part provided in correspondence to an upper major surface of the contact layer (44), a first electrode (62) provided on the contact layer for injecting carriers of a first polarity, a second electrode (49) provided on the lower major surface of the substrate for injecting carriers of a second polarity, and an optical passage (48) provided in correspondence to the spherical surface of the convex lens part for emitting the optical beam as a parallel beam. |
| 公开日期 | 1995-08-03 |
| 申请日期 | 1992-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46015]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MAKIUCHI MASAO,JP. Laserdiode mit zu den Epitaxieschichten im wesentlichen senkrecht verlaufendem Ausgangsstrahl.. DE69201908T2. 1995-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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