Semiconductor interband lasers and method of forming
文献类型：专利
| 作者 | YANG, RUI Q.; MISHIMA, TETSUYA; SANTOS, MICHAEL B.; TIAN, ZHAOBING; JOHNSON, MATTHEW B.; HINKEY, ROBERT T. |
| 发表日期 | 2015-01-06 |
| 专利号 | US8929417 |
| 著作权人 | THE BOARD OF REGENTS OF THE UNIVERSITY OF OKLAHOMA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor interband lasers and method of forming |
| 英文摘要 | A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal. |
| 公开日期 | 2015-01-06 |
| 申请日期 | 2010-12-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46018]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE BOARD OF REGENTS OF THE UNIVERSITY OF OKLAHOMA |
| 推荐引用方式 GB/T 7714 | YANG, RUI Q.,MISHIMA, TETSUYA,SANTOS, MICHAEL B.,et al. Semiconductor interband lasers and method of forming. US8929417. 2015-01-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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