Surface emitting semiconductor laser, surface emitting semiconductor laser device, light transmission apparatus, and information processing apparatus
文献类型:专利
作者 | KONDO, TAKASHI |
发表日期 | 2014-07-15 |
专利号 | US8780950 |
著作权人 | FUJI XEROX CO., LTD. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Surface emitting semiconductor laser, surface emitting semiconductor laser device, light transmission apparatus, and information processing apparatus |
英文摘要 | A surface emitting semiconductor laser includes a substrate, a first semiconductor multi-layer reflector formed on the substrate and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, a semi-insulating i type AlGaAs layer formed on the first semiconductor multi-layer reflector, an n type semiconductor layer formed on the AlGaAs layer, an active region formed on the semiconductor layer, a p type second semiconductor multi-layer reflector formed on the active region and including a pair of a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index which are laminated, an n side first electrode electrically connected to the semiconductor layer, and a p side second electrode electrically connected to the second semiconductor multi-layer reflector. |
公开日期 | 2014-07-15 |
申请日期 | 2012-08-28 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/46022] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJI XEROX CO., LTD. |
推荐引用方式 GB/T 7714 | KONDO, TAKASHI. Surface emitting semiconductor laser, surface emitting semiconductor laser device, light transmission apparatus, and information processing apparatus. US8780950. 2014-07-15. |
入库方式: OAI收割
来源:西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。