Semiconductor device and method for producing the same
文献类型：专利
| 作者 | ONISHI, TOSHIKAZU; ADACHI, HIDETO; MANNOU, MASAYA; TAKAMORI, AKIRA |
| 发表日期 | 2003-12-30 |
| 专利号 | US6671301 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and method for producing the same |
| 英文摘要 | A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width. A concentration of an impurity in the etching stop layer in the vicinity of the at least one cavity end face is greater than a concentration of the impurity in the interior of a cavity and equal to or smaller than about 2x10cm. |
| 公开日期 | 2003-12-30 |
| 申请日期 | 2000-05-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46023]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | ONISHI, TOSHIKAZU,ADACHI, HIDETO,MANNOU, MASAYA,et al. Semiconductor device and method for producing the same. US6671301. 2003-12-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。