Method of manufacturing a semiconductor device that uses a sapphire substrate
文献类型：专利
| 作者 | SASSA, MICHINARI; KOIDE, NORIKATSU |
| 发表日期 | 1997-05-06 |
| 专利号 | US5627109 |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing a semiconductor device that uses a sapphire substrate |
| 英文摘要 | A sapphire wafer is sliced off parallel to a plane "a" {11+E,ovs 2+EE 0} so that patterns on its top surface are rectangular in shape as defined by an axis "c" (0001) and an axis "m" (10+E,ovs 1+EE 0). The sapphire wafer is fixed on a table. A scriber blade that is coated with synthetic diamond scribes the surface of the sapphire wafer so that scribe lines are formed in a checkered pattern. One of the scribe lines is inclined from axis "c" (001) by 20 to 70 degrees in a clockwise direction and the other scribe line is inclined from the axis "c" (001) by 20 to 70 degrees in a counterclockwise direction. After scribing, pressure is applied by a roller along the scribe lines so as to cause the sapphire wafer to break into a sapphire chip. The yield of sapphire chips is increased by the use of this method because chipping is less likely to occur. |
| 公开日期 | 1997-05-06 |
| 申请日期 | 1995-09-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46035]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | SASSA, MICHINARI,KOIDE, NORIKATSU. Method of manufacturing a semiconductor device that uses a sapphire substrate. US5627109. 1997-05-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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