Strained quantum well laser for high temperature operation
文献类型：专利
| 作者 | DERRY, PAMELA L.; HONG, CHI-SHAIN; CHAN, ERIC Y.; FIGUEROA, LUIS; FU, R. JENNHWA |
| 发表日期 | 1993-02-23 |
| 专利号 | US5189679 |
| 著作权人 | CURATORS OF THE UNIVERSITY OF MISSOURI, THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Strained quantum well laser for high temperature operation |
| 英文摘要 | A semiconductor laser having increased reliability and enhanced high temperature operation. The device is based upon GaAs/AlGaAs, and comprises a quantum well active layer that is strained by the inclusion of the indium. The rear facet of the device has a high reflectivity coating, and the front facet reflectivity and cavity length are adjusted based upon the required output power. For high output power at high temperature, long cavity lengths and low front facet reflectivities are used. For low current operation and low output power at high temperature, shorter cavities and higher front facet reflectivities are used. The lasers are capable of reliably operating at temperatures up to and in excess of 100 DEG C. |
| 公开日期 | 1993-02-23 |
| 申请日期 | 1991-09-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46036]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CURATORS OF THE UNIVERSITY OF MISSOURI, THE |
| 推荐引用方式 GB/T 7714 | DERRY, PAMELA L.,HONG, CHI-SHAIN,CHAN, ERIC Y.,et al. Strained quantum well laser for high temperature operation. US5189679. 1993-02-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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