Semiconductor light-emitting device and method of manufacturing the same
文献类型：专利
| 作者 | KINOSHITA, JUN'ICHI; MORINAGA, MOTOYASU; FURUYAMA, HIDETO; HIRAYAMA, YUZO |
| 发表日期 | 1990-09-18 |
| 专利号 | US4958202 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light-emitting device and method of manufacturing the same |
| 英文摘要 | An active layer is formed on an n-type InP buffer layer (11) of a substrate (10). A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion (12a) and side portions. A p-type InP cladding layer (15) is deposited on the entire surface of the active layer and grooves. The cladding layer (15) is selectively etched to form a mesa portion including the central active portion (12a) and expose the buffer layer (11). An insulating film (18) is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured. |
| 公开日期 | 1990-09-18 |
| 申请日期 | 1989-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46038]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | KINOSHITA, JUN'ICHI,MORINAGA, MOTOYASU,FURUYAMA, HIDETO,et al. Semiconductor light-emitting device and method of manufacturing the same. US4958202. 1990-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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