半導体光集積素子とその製造方法
文献类型：专利
| 作者 | 村田 茂; 山口 昌幸 |
| 发表日期 | 1998-04-17 |
| 专利号 | JP2771276B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体光集積素子とその製造方法 |
| 英文摘要 | PURPOSE:To facilitate fabrication and improve optical coupling efficiency by using a multiple quantum well(MQW) layer which is formed simultaneously by crystal growth for a light-emitting region and a light-modulation region. CONSTITUTION:An n-type InGaAsP light guide layer 20, first and second MQW layers 30 and 40, a p-type InP clad layer 50, and a P-type InGaAsP cap layer 60 are allowed to grown on an n-type InP substrate 10 where a diffraction grid 80 is formed partially. Then, a buried structure for controlling the horizontal mode is formed. After etching the central part of a DFB laser region 100 and a light modulator region 200 in mesa shape, a high-resistance InP buried layer 90 where iron is doped is allowed to grow on both sides. Then, after attaching an electrode 70, a separation groove 300 due to etching is formed between two regions. Finally, an element is cut out by cleavage and a non- reflection coat film 95 is formed at the end face of the light modulator region 200, thus eliminating the need for selective crystal growth, achieving an easy fabrication, and achieving nearly 100% optical coupling efficiency between the DFB laser region 100 and the light modulator region 200. |
| 公开日期 | 1998-07-02 |
| 申请日期 | 1989-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46039]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 村田 茂,山口 昌幸. 半導体光集積素子とその製造方法. JP2771276B2. 1998-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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