Nitride based semiconductor light emitting device and nitride based semiconductor laser device
文献类型：专利
| 作者 | HAYASHI, NOBUHIKO; GOTO, TAKENORI; KANO, TAKASHI; NOMURA, YASUHIKO |
| 发表日期 | 2005-07-05 |
| 专利号 | US6914922 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride based semiconductor light emitting device and nitride based semiconductor laser device |
| 英文摘要 | A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 μm. |
| 公开日期 | 2005-07-05 |
| 申请日期 | 2001-07-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46045]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | HAYASHI, NOBUHIKO,GOTO, TAKENORI,KANO, TAKASHI,et al. Nitride based semiconductor light emitting device and nitride based semiconductor laser device. US6914922. 2005-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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