Light-emitting semiconductor device with reduced obstructions to light emission
文献类型：专利
| 作者 | OGIHARA, MITSUHIKO; NAKAMURA, YUKIO; TANINAKA, MASUMI; HAMANO, HIROSHI |
| 发表日期 | 2002-05-07 |
| 专利号 | US6384429 |
| 著作权人 | OKI DATA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light-emitting semiconductor device with reduced obstructions to light emission |
| 英文摘要 | In one aspect of the invention, a light-emitting semiconductor device has a light-emitting layer with a certain bandgap energy, an upper cladding layer with a higher bandgap energy, a first diffusion area extending into the light-emitting layer, a second diffusion area extending only into the upper cladding layer, and an electrode making contact with the second diffusion area, without covering any part of the first diffusion area. The second diffusion area conducts current to the first diffusion area, where light is emitted from a pn junction in the light-emitting layer. In another aspect of the invention, a semiconductor contact layer is provided to assure ohmic contact with the electrode, and the semiconductor contact layer is removed from the light-emitting area, avoiding absorption of light. |
| 公开日期 | 2002-05-07 |
| 申请日期 | 1999-07-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46048]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DATA CORPORATION |
| 推荐引用方式 GB/T 7714 | OGIHARA, MITSUHIKO,NAKAMURA, YUKIO,TANINAKA, MASUMI,et al. Light-emitting semiconductor device with reduced obstructions to light emission. US6384429. 2002-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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