集積型半導体レーザ装置
文献类型：专利
| 作者 | 日向 進 |
| 发表日期 | 1998-01-23 |
| 专利号 | JP2740762B2 |
| 著作权人 | 工業技術院長 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 集積型半導体レーザ装置 |
| 英文摘要 | PURPOSE:To remove the maximum order supermode by limiting the widths of a semiconductor layer and a waveguide corresponding to the difference in refractive indexes between the waveguide and semiconductor layers in a waveguide adjacent to the waveguide. CONSTITUTION:A semiconductor layer 2, a lower clad layer 4, an active layer 5, an active region 6, and an upper clad layer 7 are formed on a semiconductor substrate A 10-string waveguide 11 made of 10-string stripe grooves formed by etching the layer 2 is limited in width W in response to the value of the difference of the refractive indexes of the waveguide 11 and the layer 2 between the adjacent waveguides 11 to the waveguide 1 Thus, since an intrinsic mode generated by optical coupling, i.e., the maximum order supermode is removed, the reference mode having a gain larger next to the maximum order supermode can readily rise, thereby increasing the farther visual field image perpendicularly to the end face to the maximum. |
| 公开日期 | 1998-04-15 |
| 申请日期 | 1985-10-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46051]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 工業技術院長 |
| 推荐引用方式 GB/T 7714 | 日向 進. 集積型半導体レーザ装置. JP2740762B2. 1998-01-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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