Semiconductor laser and a method for producing the same
文献类型：专利
| 作者 | ADACHI, HIDETO; KIDOGUCHI, ISAO; OHNAKA, KIYOSHI; KAMIYAMA, SATOSHI |
| 发表日期 | 1999-10-26 |
| 专利号 | US5974068 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and a method for producing the same |
| 英文摘要 | A semiconductor laser according to the present invention includes: a semiconductor substrate; a multilayer structure provided on the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers interposing the active layer, and current confining portion for injecting a current into a stripe-shaped predetermined region of the active layer, wherein the current confining portion includes a first current confining layer formed in regions excluding a region corresponding to the predetermined region of the active layer, the first current confining layer having an energy band gap larger than an energy band gap of the active layer and having a refractive index smaller than a refractive index of the active layer. |
| 公开日期 | 1999-10-26 |
| 申请日期 | 1997-03-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46054]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | ADACHI, HIDETO,KIDOGUCHI, ISAO,OHNAKA, KIYOSHI,et al. Semiconductor laser and a method for producing the same. US5974068. 1999-10-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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