Halbleiterstruktur
文献类型：专利
| 作者 | HAYASHI KAZUO; SONODA,TAKUJI |
| 发表日期 | 1992-07-09 |
| 专利号 | DE3932277C2 |
| 著作权人 | MITSUBISHI DENKI K.K. |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Halbleiterstruktur |
| 英文摘要 | PURPOSE:To reduce crystal defects of a hetero-epitaxial film by a method wherein a first semiconductor is provided with a semiconductor element formed on a second semiconductor on a region which has been selectively etched partially. CONSTITUTION:An Si epitaxial layer 4 is formed on an Si substrate 1; a superlattice 3, in succession, undoped GaAs 5 and n-type GaAs 6 are grown continuously; a high-temperature annealing operation is executed. After that, the Si substrate 1 and the Si epitaxial layer 4 in a required part are etched selectively by using an etchant such as sulfuric acid or the like in such a way that only Si is etched and that GaAs is not etched. In succession, a protective film 8 is formed; after that, an Si element 9 having a memory function of Si is formed on the Si epitaxial layer 4. Thereby, a peak intensity of photoluminescence in a part where Si in a substratum has been removed and in a part where it has not been removed amounts to 5:1; defects in the part where the Si has been removed can be reduced. |
| 公开日期 | 1992-07-09 |
| 申请日期 | 1989-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46060]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI K.K. |
| 推荐引用方式 GB/T 7714 | HAYASHI KAZUO,SONODA,TAKUJI. Halbleiterstruktur. DE3932277C2. 1992-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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