Tunable vertical-cavity surface-emitting laser with tuning junction
文献类型:专利
作者 | HWANG, WEN-YEN; LIN, CHIH-HSIANG; ZHENG, JUN; BAILLARGEON, JAMES N. |
发表日期 | 2004-02-24 |
专利号 | US6697413 |
著作权人 | APPLIED OPTOELECTRONICS, INC. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Tunable vertical-cavity surface-emitting laser with tuning junction |
英文摘要 | An embodiment of a surface-emitting laser structure includes a first semiconductor region of a first conductivity type coupled to a first contact and a second semiconductor region of the same conductivity type coupled to a second contact. A third semiconductor region of the opposite conductivity type is coupled to a third contact and interposed between the first and second semiconductor regions. An active region is interposed between the first and third regions. In a further embodiment, the laser structure may include a variable refractive index structure interposed between the second and third semiconductor regions. In another embodiment, a surface-emitting laser structure may include an active region between a first semiconductor region of a first conductivity type coupled to a first contact, and a second As semiconductor region of opposite conductivity type coupled to a second contact. A third electrical contact is dielectrically spaced from the second semiconductor region. |
公开日期 | 2004-02-24 |
申请日期 | 2001-10-31 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/46064] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | APPLIED OPTOELECTRONICS, INC. |
推荐引用方式 GB/T 7714 | HWANG, WEN-YEN,LIN, CHIH-HSIANG,ZHENG, JUN,et al. Tunable vertical-cavity surface-emitting laser with tuning junction. US6697413. 2004-02-24. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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