Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode
文献类型：专利
| 作者 | HAYASHI, SHIGEO; OKAWA, KAZUHIRO; MITSUYU, TSUNEO |
| 发表日期 | 1994-08-23 |
| 专利号 | US5341001 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode |
| 英文摘要 | Disclosed is a photo semiconductor material characterized in the blue to ultraviolet wavelength region. The semiconductor is firmed by lattice matching a sulfide-selenide manganese-zinc epitaxial mixed crystal film to the substrate. A blue laser diode is fabricated by forming a double hereto quantum well structure on a substrate by using sulfide-selenide manganese-zinc mixed crystal films as clad layers. A zinc molecular beam, a manganese molecular beam, a sulfur molecular beam, and a selenium molecular beam are simultaneously emitted onto a GaAs substrate in an ultrahigh vacuum, and a mixed crystal of Zn1-xMnxSySe1-y (0 |
| 公开日期 | 1994-08-23 |
| 申请日期 | 1993-01-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46071]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | HAYASHI, SHIGEO,OKAWA, KAZUHIRO,MITSUYU, TSUNEO. Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode. US5341001. 1994-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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