Ridge semiconductor laser and method for manufacturing a ridge semiconductor laser
文献类型：专利
| 作者 | KOZEN, ATSUO; OTE, YASUYOSHI; ASAOKA, JUN-ICHI; HIRAI, KENJI; YOKOYAMA, HIROSHI |
| 发表日期 | 2015-04-07 |
| 专利号 | US9001859 |
| 著作权人 | NTT ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Ridge semiconductor laser and method for manufacturing a ridge semiconductor laser |
| 英文摘要 | The ridge semiconductor laser is a semiconductor laser in which a carrier stopper layer made of an AlInAs compound, a clad layer made of an AlGaInAs compound, and an etching stopper layer made of an InGaAsP compound are stacked in sequence on one side of an active layer made of an AlGaInAs compound. The ridge semiconductor laser is provided with a ridge waveguide including, in a layer made of an InP compound, a diffraction grating made of an InGaAsP compound on the opposite side of the clad layer of the etching stopper layer. |
| 公开日期 | 2015-04-07 |
| 申请日期 | 2011-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46074]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NTT ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | KOZEN, ATSUO,OTE, YASUYOSHI,ASAOKA, JUN-ICHI,et al. Ridge semiconductor laser and method for manufacturing a ridge semiconductor laser. US9001859. 2015-04-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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