Method of farbicating highly lattice mismatched quantum well structures
文献类型：专利
| 作者 | MELMAN, PAUL; ELMAN, BORIS S.; KOTELES, EMIL S.; JAGANNATH, CHIRRAVURI |
| 发表日期 | 1991-06-04 |
| 专利号 | US5021360 |
| 著作权人 | GTE LABORATORIES INCORPORATED, A CORP. OF DE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of farbicating highly lattice mismatched quantum well structures |
| 英文摘要 | A method of fabricating a semiconductor heterostructure (5) includes the growth of a quantum well active region (50) that is highly lattice-mismatched relative to a substrate (10). A buffer layer (20) having a thickness above a critical value is grown <>n the substrate (10) whereby the stress due to a lattice constant mismatch between the buffer layer (20) and substrate (10) is relieved through the formation of misfit dislocations. A strained superlattice structure (30) is grown on the buffer layer (20) in order to terminate any upwardlypropagating dislocations. An unstrained barrier layer (40) is subsequently grown on the superlattice structure (30). The fabrication method concludes with the growth of a quantum well structure (50) on the unstrained layer (40} wherein a lattice constant mismatch between the quantum well structure (50) and the unstrained barrier layer (40) is smaller than the lattice constant mismatch between the quantum well structure (50) and the substrate (10). As a result, only a fraction of the stress due to the large lattice mismatch between the quantum well structure (50) and the substrate (10) is accommodated by coherent strain in the quantum well structure (50), while the remainder of the stress is relieved through the formation of misfit dislocations spatially separated from the quantum well structure (50). |
| 公开日期 | 1991-06-04 |
| 申请日期 | 1989-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46075]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GTE LABORATORIES INCORPORATED, A CORP. OF DE |
| 推荐引用方式 GB/T 7714 | MELMAN, PAUL,ELMAN, BORIS S.,KOTELES, EMIL S.,et al. Method of farbicating highly lattice mismatched quantum well structures. US5021360. 1991-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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