Semiconductor integrated device
文献类型：专利
| 作者 | TAKABAYASHI, KAZUMASA |
| 发表日期 | 2011-01-18 |
| 专利号 | US7873082 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor integrated device |
| 英文摘要 | A semiconductor integrated device includes a plurality of wavelength tunable lasers, provided on a semiconductor substrate, and having oscillation wavelength ranges different from each other. Each of the wavelength tunable lasers includes an optical waveguide including, alternately in an optical axis direction, a gain waveguide portion and a wavelength controlling waveguide portion, and a diffraction grating provided over both the gain waveguide portion and the wavelength controlling waveguide portion. A value obtained by dividing a width of the wavelength controlling waveguide portion by a width of the gain waveguide portion in one of the plurality of wavelength tunable lasers is larger than a value obtained by dividing a width of the wavelength controlling waveguide portion by a width of the gain waveguide portion in a different one of the wavelength tunable lasers, which oscillates on a shorter wavelength side with respect to an oscillation wavelength range of the one wavelength tunable laser. |
| 公开日期 | 2011-01-18 |
| 申请日期 | 2009-08-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46076]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | TAKABAYASHI, KAZUMASA. Semiconductor integrated device. US7873082. 2011-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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